Title :
A fast switching segmented anode NPN controlled LIGBT
Author :
Hardikar, Shyam ; Tadikonda, R. ; Sweet, M. ; Vershinin, K. ; Narayanan, Sankara M E
Author_Institution :
Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK
Abstract :
An ultrafast low energy loss lateral insulated gate bipolar transistor (LIGBT) with a novel segmented anode structure is demonstrated. The anode comprises segments of p/sup +/ and n/sup +//p (n/sup +/ region formed within a p-type region) along the width of the device. By simply varying the ratio of these segments the tradeoff between conduction and switching losses can be varied. Unlike an anode shorted structure this does not exhibit an undesirable snapback in its on-state characteristics. This structure is simple to realize in a CDMOS process without the need for any additional process steps.
Keywords :
anodes; high-speed techniques; insulated gate bipolar transistors; power semiconductor switches; semiconductor device breakdown; CDMOS process; breakdown voltages; conduction switching loss tradeoff; fast switching segmented anode NPN controlled LIGBT; n/sup +/ region; p/sup +/ region; segmented anode structure; snapback; switching speed; ultrafast low energy loss lateral insulated gate bipolar transistor; Anodes; Electrons; Energy loss; Insulated gate bipolar transistors; Isolation technology; Low voltage; MOSFET circuits; Pulse modulation; Space vector pulse width modulation; Switching loss;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.819270
