Title :
Effect of high-temperature electron irradiation in thin gate oxide FD-SOI n-MOSFETs
Author :
Hayama, Kiyoteru ; Takakura, Kenichiro ; Ohyama, Hidenori ; Rafí, Joan Marc ; Simoen, Eddy ; Mercha, Abdelkarim ; Claeys, Cor
Author_Institution :
Kumamoto Nat. Coll. of Technol., Japan
Abstract :
The degradation of deep submicrometer (0.1 μm) fully depleted silicon-on-insulator n-MOSFETs subjected to 2-MeV electron irradiation at different temperatures is reported. The radiation-induced damage is investigated by studying the static characteristics of devices with different geometries and bias conditions. The change of the front and back-channel parameters, the impact of the gate coupling effect and the gate-induced floating body effects and the irradiation temperature dependence of these degradations are clarified. It is found that the degradation of the electrical properties tends to be small for high temperature irradiation compared with that for room temperature.
Keywords :
MOSFET; electron beam effects; silicon-on-insulator; thin film transistors; 2 MeV; electrical properties degradation; gate coupling effect; gate-induced floating body effect; high-temperature electron irradiation; radiation-induced damage; room temperature; thin gate oxide fully depleted silicon-on-insulator n-MOSFETs; Degradation; Electrons; Geometry; Immune system; Ionization; MOSFET circuits; Semiconductor films; Silicon on insulator technology; Temperature dependence; Testing; Electron irradiation; MOSFET; fully depleted silicon-on-insulator (FD-SOI); gate coupling; high-temperature irradiation;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.860729
