Total dose radiation response of CMOS compatible SOI MESFETs

Author

Spann, John ; Kushner, Vadim ; Thornton, Trevor J. ; Yang, Jinman ; Balijepalli, Asha ; Barnaby, Hugh J. ; Chen, Xiao Jie ; Alexander, David ; Kemp, William T. ; Sampson, Steve J. ; Wood, Michael E.

Author_Institution

Electr. Eng. Dept., Arizona State Univ., Tempe, AZ, USA

Volume

52

Issue

6

fYear

2005

Firstpage

2398

Lastpage

2402

Abstract

Metal semiconductor field effect transistors (MESFETs) have been fabricated using a silicon-on-insulator (SOI) CMOS process. The MESFETs make use of a TiSi₂ Schottky gate and display good depletion mode characteristics with a threshold voltage of -0.5 V. The drain current can also be controlled by a voltage applied to the substrate, which then behaves as a MOS back gate. The transistors have been irradiated with 50 keV X-rays to a total ionizing dose in excess of 1 Mrad(Si). After irradiation the threshold voltage of both the top Schottky gate and the back MOS gate shift to more negative values. The shift in threshold is attributed to radiation induced fixed oxide charge at the interface between the SOI channel and the buried oxide.

Keywords

CMOS integrated circuits; MESFET integrated circuits; X-ray effects; radiation hardening (electronics); silicon-on-insulator; titanium compounds; -0.5 V; 50 keV; CMOS compatible SOI MESFET; MOS gate shift; Si; TiSi₂; TiSi₂ Schottky gate; X-ray irradiation; depletion mode characteristics; drain current; threshold voltage; total dose radiation response; CMOS process; CMOS technology; FETs; Gallium arsenide; MESFETs; Silicon on insulator technology; Space technology; Substrates; Threshold voltage; X-rays; MESFETs; X-ray effects; silicon-on-insulator technology;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2005.860701

Filename

1589214