Title :
Autonomous bit error rate testing at multi-gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST)
Author :
Marshall, Paul ; Carts, Marty ; Currie, Steve ; Reed, Robert ; Randall, Barb ; Fritz, Karl ; Kennedy, Krystal ; Berg, Melanie ; Krithivasan, Ramkumar ; Siedleck, Christina ; Ladbury, Ray ; Marshall, Cheryl ; Cressler, John ; Niu, Guofu ; LaBel, Ken ; Gilb
Author_Institution :
Muniz Eng. Inc., Houston, TX, USA
Abstract :
SEE testing at multi-Gbit/s data rates has traditionally involved elaborate high speed test equipment setups for at-speed testing. We demonstrate a generally applicable self test circuit approach implemented in IBM´s 5AM SiGe process, and describe its ability to capture complex error signatures during circuit operation at data rates exceeding 5 Gbit/s. Comparisons of data acquired with FPGA control of the CREST ASIC versus conventional bit error rate test equipment validate the approach. In addition, we describe SEE characteristics of the IBM 5AM process implemented in five variations of the D flip-flop based serial register. Heavy ion SEE data acquired at angles follow the traditional RPP-based analysis approach in one case, but deviate by orders on magnitude in others, even though all circuits are implemented in the same 5AM SiGe HBT process.
Keywords :
Ge-Si alloys; built-in self test; error statistics; flip-flops; heterojunction bipolar transistors; ion beam effects; semiconductor heterojunctions; D flip-flop based serial register; IBM SiGe HBT process; SiGe; autonomous bit error rate testing; circuit for radiation effect self test; single event effect testing; Application specific integrated circuits; Automatic testing; Bit error rate; Circuit testing; Field programmable gate arrays; Flip-flops; Germanium silicon alloys; Radiation effects; Silicon germanium; Test equipment; Built in self test; high speed bit error rate testing SiGe; single event effects (SEEs);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.860740