Optimization of magnetotransistor structure in CMOS technology

Author

Smy, T. ; Ristic, Lj.

Author_Institution

Dept. of Electron. Carleton Univ., Ottawa, Ont., Canada

Volume

28

Issue

5

fYear

1992

fDate

9/1/1992 12:00:00 AM

Firstpage

2024

Lastpage

2030

Abstract

Experimental results are presented for the comparison of a novel CMOS-based magnetic sensor and a lateral magnetotransistor. Results indicating a dramatic increase in sensitivity are given, and a linear response is obtained. An improvement in the device sensitivity of four times was measured, and a maximum sensitivity of 200%/T was found. An explanation for the increase in sensitivity is proposed and confirmed by an analysis of both the electrical and magnetic characteristics of both devices. This explanation attributes the increase in sensitivity to the inhibition of laterally injected electrons from the emitter edges. This is achieved by the placement of p ⁺ stripes along the emitter edges. Additional experimental results show that an increase in sensitivity was found as the emitter length of the magnetic sensor was shortened

Keywords

CMOS integrated circuits; bipolar transistors; electric sensing devices; magnetic field measurement; CMOS-based magnetic sensor; emitter length; lateral magnetotransistor; laterally injected electrons; linear response; magnetic characteristics; sensitivity; Bipolar transistors; CMOS technology; Electron emission; Magnetic analysis; Magnetic devices; Magnetic semiconductors; Magnetic sensors; Semiconductor devices; Superconducting magnets; Switches;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.179393

Filename

179393