DocumentCode :
819014
Title :
RHBD techniques for mitigating effects of single-event hits using guard-gates
Author :
Balasubramanian, A. ; Bhuva, B.L. ; Black, J.D. ; Massengill, L.W.
Author_Institution :
Electr. Eng. Dept., Vanderbilt Univ., Nashville, TN, USA
Volume :
52
Issue :
6
fYear :
2005
Firstpage :
2531
Lastpage :
2535
Abstract :
Hardening-by-design techniques to mitigate the effect of single-event transients (SET) using guard-gates are developed. Design approaches for addressing combinational logic hits and storage cell hits are presented. Simulation results show that the designs using guard-gates are less susceptible to single-event hits. Area, power, and speed penalty for guard-gate designs for combinational logic are found to be minimal. For latches, the area penalty is higher but speed penalty is minimal.
Keywords :
CMOS digital integrated circuits; circuit simulation; combinational circuits; logic design; radiation hardening (electronics); RHBD techniques; addressing combinational logic hits; complementary metal-oxide-semiconductor; guard-gates; hardening-by-design techniques; mitigating effects; single-event hits; single-event transients; storage cell hits; transient pulsewidth; Circuit synthesis; Clocks; Combinational circuits; Error analysis; Frequency; Latches; Logic design; Pulse circuits; Pulse generation; Voting; Complementary metal–oxide–semiconductor (CMOS); single-event hits; single-event transient (SET); transient pulsewidth;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2005.860719
Filename :
1589234
Link To Document :
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