Accurate SPICE models for CMOS analog radiation-hardness-by-design

A new accurate modeling technique based on conformal mapping provides SPICE models for edgeless field-effect transistors (FETs) with arbitrary gate geometries for analog radiation-hardness-by-design. Generated models are compared to data measured from FETs with annular and other geometries fabricated on TSMC 0.25 μm and 0.18 μm processes. Currents, output resistances and capacitances all typically agree to within 10% of measured data. Application of the model to alternative gate geometries useful for analog radiation hardened design is explored.