Dispersion of phonon-assisted nonresonant third-order nonlinearities

Author

Dinu, Mihaela

Author_Institution

Bell Labs., Holmdel, NJ, USA

Volume

39

Issue

11

fYear

2003

Firstpage

1498

Lastpage

1503

Abstract

An analysis of the dispersion of two-photon absorption and Kerr nonlinearity of indirect semiconductors below the indirect bandgap is presented. Similar to the case of linear absorption, third-order nonlinear processes are found to be mediated by phonon-assisted transitions. The Kerr coefficient n₂ is positive below the indirect gap, and the dispersion of the third-order nonlinearities is reduced relative to direct semiconductors. The results are compared with existing experimental data in silicon.

Keywords

electron-phonon interactions; elemental semiconductors; energy gap; infrared spectra; optical Kerr effect; optical dispersion; semiconductors; silicon; transparency; two-photon spectra; Kerr nonlinearity; Si; dispersion; indirect bandgap; indirect semiconductors; near-infrared wavelengths; phonon-assisted nonresonant third-order nonlinearities; positive Kerr coefficient; silicon; third-order nonlinear processes; transparency region; two-photon absorption; two-photon absorption spectrum; Absorption; Nonlinear optical devices; Nonlinear optics; Optical devices; Optical filters; Optical refraction; Optical ring resonators; Photonic band gap; Silicon; Ultrafast optics;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2003.818277

Filename

1242372