Evaluating TM1019.6 ELDRS screening methods using gated lateral PNP transistors

Author

Nowlin, R.N. ; Pease, R.L. ; Platteter, D.G. ; Dunham, G.W. ; Seiler, J.E.

Author_Institution

Microelectron. Div., ATK Mission Res., Albuquerque, NM, USA

Volume

52

Issue

6

fYear

2005

Firstpage

2609

Lastpage

2615

Abstract

The total-dose response of gated lateral PNP transistors is presented for the first time for the various enhanced low-dose-rate sensitivity (ELDRS)-related test conditions of Mil-STD 883F Test Method 1019.6. We compare the PNP results to those of NPN transistors from ELDRS test chips manufactured at National Semiconductor Corporation (NSC). These data provide a physical basis for the limitations placed on the TM1019.6 ELDRS tests and confirm the conservative nature of these tests for the NSC ELDRS process.

Keywords

bipolar transistors; dosimetry; radiation effects; ELDRS test chips; Mil-STD 883F test method 1019.6; National Semiconductor Corporation; TM1019.6 ELDRS screening methods; bipolar transistors; enhanced low-dose-rate sensitivity; gated lateral PNP transistors; total-dose response; Bipolar transistors; Circuit testing; Cranes; Data analysis; Linear circuits; Manufacturing; Microelectronics; Semiconductor device manufacture; Semiconductor device testing; Time factors; Bipolar transistors; enhanced low-dose-rate sensitivity (ELDRS); hardness assurance; total ionizing dose;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2005.860710

Filename

1589246