• DocumentCode
    819281
  • Title

    Displacement damage correlation of proton and silicon ion radiation in GaAs

  • Author

    Warner, Jeffrey H. ; Messenger, Scott R. ; Walters, Robert J. ; Summers, Geoffrey P.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • Volume
    52
  • Issue
    6
  • fYear
    2005
  • Firstpage
    2678
  • Lastpage
    2682
  • Abstract
    We present results of displacement damage correlation between 2 MeV protons and 22 MeV silicon ion irradiation damage in p+n GaAs solar cells. The radiation induced degradation of the photovoltaic response correlates well in terms of displacement damage dose.
  • Keywords
    III-V semiconductors; elemental semiconductors; energy loss of particles; gallium arsenide; photovoltaic effects; proton effects; silicon; solar cells; 2 MeV; 22 MeV; GaAs; GaAs solar cells; Si; displacement damage correlation; nonionizing energy loss; photovoltaic; proton ion radiation; radiation induced degradation; silicon ion radiation; Atomic layer deposition; Atomic measurements; Degradation; Electrons; Energy loss; Gallium arsenide; Laboratories; Photovoltaic cells; Protons; Silicon; Damage correlation; GaAs solar cells; SRIM; displacement damage; ion irradiation; nonionizing energy loss (NIEL); proton irradiation; radiation damage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2005.860737
  • Filename
    1589256
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=819281