Title :
Displacement damage correlation of proton and silicon ion radiation in GaAs
Author :
Warner, Jeffrey H. ; Messenger, Scott R. ; Walters, Robert J. ; Summers, Geoffrey P.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
We present results of displacement damage correlation between 2 MeV protons and 22 MeV silicon ion irradiation damage in p+n GaAs solar cells. The radiation induced degradation of the photovoltaic response correlates well in terms of displacement damage dose.
Keywords :
III-V semiconductors; elemental semiconductors; energy loss of particles; gallium arsenide; photovoltaic effects; proton effects; silicon; solar cells; 2 MeV; 22 MeV; GaAs; GaAs solar cells; Si; displacement damage correlation; nonionizing energy loss; photovoltaic; proton ion radiation; radiation induced degradation; silicon ion radiation; Atomic layer deposition; Atomic measurements; Degradation; Electrons; Energy loss; Gallium arsenide; Laboratories; Photovoltaic cells; Protons; Silicon; Damage correlation; GaAs solar cells; SRIM; displacement damage; ion irradiation; nonionizing energy loss (NIEL); proton irradiation; radiation damage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.860737
