Title :
Proton damage effects in high performance P-channel CCDs
Author :
Spratt, James P. ; Conger, Chris ; Bredthauer, Richard ; Byers, Wheaton ; Groulx, Robert ; Leadon, Roland ; Clark, Henry
Author_Institution :
Full Circle Res. Inc., Redondo Beach, CA, USA
Abstract :
P-channel CCDs with pre-rad imaging characteristics comparable to the best N-channel CCDs have been fabricated and tested. These devices have been subjected to proton damage and display the superior hardness predicted for them.
Keywords :
charge exchange; charge-coupled devices; proton effects; N-channel charge-coupled devices; P-channel charge-coupled devices; charge transfer efficiency; displacement damage hardened imagers; proton damage effects; superior hardness; Charge coupled devices; Charge transfer; Clocks; Delay effects; Displays; Image analysis; Life testing; Protons; Silicon; Temperature; Charge transfer efficiency; P-channel CCDs; displacement damage hardened imagers;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.860738
