Comparison of Transient Thermal Parameters for Different Die-Connecting Approaches

This paper compares two die-connecting approaches based on a simple experimental method to obtain characterizations of transient and steady-state die thermal parameters. This method, named thermal-resistance analysis by an induced transient (TRAIT) method, uses the first n terms of the time-constant spectrum obtained from the cool-down-temperature transient measurements to get the complete characterizations of a Cauer equivalent thermal network with n cells. The details of this method, including the experimental setup, cool-down-temperature recording, curve fitting of the temperature curve, and impedance decomposition, are introduced. An improved TRAIT method is introduced. The Cauer equivalent thermal circuit of the embedded-power die-connecting approach using this method is obtained and compared to the equivalent circuit of wire-bond die-connecting approach as a benchmark