High-power monolithic phase-locked arrays of antiguided semiconductor diode lasers

All-monolithic phase-locked arrays of antiguided diode lasers have recently demonstrated exceptionally high diffraction-limited powers: 0.5 W continuous wave (CW) and 2.1 W peak pulsed. An overview of theoretical and experimental work to date is presented. The performance of antiguided arrays is compared to the best results from conventional array types (evanescent-wave, Y-junction, diffraction). The two basic types of array modes: evanescent-wave and leaky-wave are discussed. Resonant leaky-wave coupling in antiguided arrays is explained and interpreted. One key new insight is revealed: when gain is placed in the low-index regions of large arrays (⩾10 elements) the array mode favoured to lase is the leaky mode (in-phase or out-of-phase) closest to its respective resonance