Title :
High-power monolithic phase-locked arrays of antiguided semiconductor diode lasers
Author_Institution :
TRW Res. Center, Redondo Beach, CA, USA
fDate :
2/1/1992 12:00:00 AM
Abstract :
All-monolithic phase-locked arrays of antiguided diode lasers have recently demonstrated exceptionally high diffraction-limited powers: 0.5 W continuous wave (CW) and 2.1 W peak pulsed. An overview of theoretical and experimental work to date is presented. The performance of antiguided arrays is compared to the best results from conventional array types (evanescent-wave, Y-junction, diffraction). The two basic types of array modes: evanescent-wave and leaky-wave are discussed. Resonant leaky-wave coupling in antiguided arrays is explained and interpreted. One key new insight is revealed: when gain is placed in the low-index regions of large arrays (⩾10 elements) the array mode favoured to lase is the leaky mode (in-phase or out-of-phase) closest to its respective resonance
Keywords :
integrated optoelectronics; semiconductor laser arrays; Talbot type spatial filtering; antiguided semiconductor diode lasers; array modes; continuous wave; diffraction-limited powers; electro-optical characteristics; evanescent-wave; gain; high power monolithic phase locked arrays; low-index regions; peak pulsed; performance; resonant leaky wave coupling;
Journal_Title :
Optoelectronics, IEE Proceedings J
