• DocumentCode
    819440
  • Title

    Lateral mode discrimination in AlGaInP selectively buried ridge waveguide lasers

  • Author

    Bour, D.P. ; Evans, G.A.

  • Author_Institution
    David Sarnoff Res. Center, Princeton, NJ, USA
  • Volume
    139
  • Issue
    1
  • fYear
    1992
  • fDate
    2/1/1992 12:00:00 AM
  • Firstpage
    71
  • Lastpage
    74
  • Abstract
    The guiding mechanism of (AlxGa1-x)0.5 In0.5P visible lasers is analysed using a simple effective index approach and is found to be analogous to that of AlGaAs channelled substrate planar lasers. Outside the ridge, the bound mode is leaky, resulting in a real lateral index guide. Furthermore, the loss outside the ridge provides good discrimination against oscillation of higher order modes. The best ridge widths, based on the tradeoff of low loss in the fundamental mode along with high lateral mode discrimination, are in the range 5-7 μm
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser modes; optical waveguides; semiconductor junction lasers; (AlxGa1-x)0.5In0.5P visible lasers; AlGaInP selectively buried ridge waveguide lasers; III-V semiconductor; bound mode; fundamental mode; guiding mechanism; higher order modes; lateral mode discrimination; loss; oscillation; real lateral index guide; ridge widths; simple effective index approach;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings J
  • Publisher
    iet
  • ISSN
    0267-3932
  • Type

    jour

  • Filename
    124256