DocumentCode
819440
Title
Lateral mode discrimination in AlGaInP selectively buried ridge waveguide lasers
Author
Bour, D.P. ; Evans, G.A.
Author_Institution
David Sarnoff Res. Center, Princeton, NJ, USA
Volume
139
Issue
1
fYear
1992
fDate
2/1/1992 12:00:00 AM
Firstpage
71
Lastpage
74
Abstract
The guiding mechanism of (AlxGa1-x)0.5 In0.5P visible lasers is analysed using a simple effective index approach and is found to be analogous to that of AlGaAs channelled substrate planar lasers. Outside the ridge, the bound mode is leaky, resulting in a real lateral index guide. Furthermore, the loss outside the ridge provides good discrimination against oscillation of higher order modes. The best ridge widths, based on the tradeoff of low loss in the fundamental mode along with high lateral mode discrimination, are in the range 5-7 μm
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser modes; optical waveguides; semiconductor junction lasers; (AlxGa1-x)0.5In0.5P visible lasers; AlGaInP selectively buried ridge waveguide lasers; III-V semiconductor; bound mode; fundamental mode; guiding mechanism; higher order modes; lateral mode discrimination; loss; oscillation; real lateral index guide; ridge widths; simple effective index approach;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings J
Publisher
iet
ISSN
0267-3932
Type
jour
Filename
124256
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