Title :
Demonstration of a 270-GHz MMIC Amplifier Using 35-nm InP HEMT Technology
Author :
Deal, W.R. ; Mei, X.B. ; Radisic, V. ; Yoshida, W. ; Liu, P.H. ; Uyeda, J. ; Barsky, M. ; Gaier, T. ; Fung, A. ; Samoska, L. ; Lai, R.
Author_Institution :
Northrop Grumman Corp., Redondo Beach, CA
fDate :
5/1/2007 12:00:00 AM
Abstract :
In this letter, the first 270-GHz millimeter-wave integrated circuit (MMIC) amplifier is demonstrated. Peak measured gain of 11.6-dB is measured for the three stage amplifier realized in coplanar waveguide. Further, positive S21 gain is measured to 340GHz making this the highest frequency MMIC amplifier reported to date. The high frequency circuit performance is enabled through a 35-nm InP high electron mobility transistor capable of extremely high frequency operation
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; coplanar waveguides; high electron mobility transistors; indium compounds; low noise amplifiers; CPW; HEMT; InP; LNA; MMIC; coplanar waveguide; high electron mobility transistor; low noise amplifier; millimeter wave integrated circuit; sub MM wave; Coplanar waveguides; Frequency; Gain measurement; HEMTs; Indium phosphide; Integrated circuit measurements; Integrated circuit technology; MMICs; Millimeter wave integrated circuits; Millimeter wave technology; Coplanar waveguide (CPW); MM-wave integrated circuit (MMIC); high electron mobility transistor (HEMT); low noise amplifier (LNA); millimeter-wave (MM-wave); sub-MM-wave;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2007.895728
