Demonstration of a 270-GHz MMIC Amplifier Using 35-nm InP HEMT Technology

Author

Deal, W.R. ; Mei, X.B. ; Radisic, V. ; Yoshida, W. ; Liu, P.H. ; Uyeda, J. ; Barsky, M. ; Gaier, T. ; Fung, A. ; Samoska, L. ; Lai, R.

Author_Institution

Northrop Grumman Corp., Redondo Beach, CA

Volume

17

Issue

5

fYear

2007

fDate

5/1/2007 12:00:00 AM

Firstpage

391

Lastpage

393

Abstract

In this letter, the first 270-GHz millimeter-wave integrated circuit (MMIC) amplifier is demonstrated. Peak measured gain of 11.6-dB is measured for the three stage amplifier realized in coplanar waveguide. Further, positive S21 gain is measured to 340GHz making this the highest frequency MMIC amplifier reported to date. The high frequency circuit performance is enabled through a 35-nm InP high electron mobility transistor capable of extremely high frequency operation

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; coplanar waveguides; high electron mobility transistors; indium compounds; low noise amplifiers; CPW; HEMT; InP; LNA; MMIC; coplanar waveguide; high electron mobility transistor; low noise amplifier; millimeter wave integrated circuit; sub MM wave; Coplanar waveguides; Frequency; Gain measurement; HEMTs; Indium phosphide; Integrated circuit measurements; Integrated circuit technology; MMICs; Millimeter wave integrated circuits; Millimeter wave technology; Coplanar waveguide (CPW); MM-wave integrated circuit (MMIC); high electron mobility transistor (HEMT); low noise amplifier (LNA); millimeter-wave (MM-wave); sub-MM-wave;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2007.895728

Filename

4167915