Extraction of Substrate Resistance in Bulk FinFETs Through RF Modeling

Author

Jung, Jae-Hong ; Lee, Jong-Ho

Author_Institution

Nano-Syst. Lab., Kyungpook Nat. Univ., Daegu

Volume

17

Issue

5

fYear

2007

fDate

5/1/2007 12:00:00 AM

Firstpage

358

Lastpage

360

Abstract

A new method to extract substrate resistance (R_sub) for small-sized nano-scale metal oxide semiconductor field effect transistors (MOSFETs) including bulk FinFETs is proposed and compared with conventional method. The R_sub´s extracted from small-size MOSFETs by using the proposed method are shown to have frequency independent characteristics, unlike those from the conventional method. Proposed equivalent circuit explains well the R_sub behavior with body width. The proposed model showed very good agreement (error in Y₂₂~3%) with three-dimensional device simulation

Keywords

MOSFET; electric resistance; equivalent circuits; nanoelectronics; semiconductor device models; substrates; CMOS; MOSFET; RF modeling; body width; bulk FinFETs; equivalent circuit; frequency independent; nano-scale metal oxide semiconductor field effect transistors; radio frequency modeling; substrate resistance; Circuit simulation; Data mining; Equivalent circuits; FETs; FinFETs; Immune system; MOSFETs; Radio frequency; Semiconductor device modeling; Substrates; Bulk Fin field effect transistors (FETs); CMOS; radio frequency (RF) modeling; small size; substrate resistance;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2007.895709

Filename

4167923