DocumentCode
819662
Title
1 
Noise of Sb-Heterostructure Diodes for Pre-Amplified Detection
Author
Schulman, J.N. ; Hsu, T.Y. ; Moyer, H.P. ; Lynch, J.J.
Author_Institution
Hughes Res. Labs., Malibu, CA
Volume
17
Issue
5
fYear
2007
fDate
5/1/2007 12:00:00 AM
Firstpage
355
Lastpage
357
Abstract
The 1/f noise of a series of Sb-heterostructure diodes with varying area has been measured. Standard power law formulas for the frequency and voltage dependence were found adequate to summarize the data. An inverse dependence of voltage noise spectral density on the area was determined, consistent with the simple resistor model. Simulations using the noise formula predict that pre-amplification gain in the 30 to 35 db range can produce a sub-1degK noise equivalent temperature difference in realistic imaging cameras
Keywords
1/f noise; III-V semiconductors; antimony; millimetre wave diodes; millimetre wave imaging; semiconductor device noise; tunnel diodes; wide band gap semiconductors; 1/f noise; 30 to 35 dB; Sb; diode heterostructure; imaging cameras; inverse dependence; millimeter wave detectors; millimeter wave imaging; noise equivalent temperature difference; noise formula; pre-amplified detection; semiconductor device noise; tunnel diodes; voltage noise spectral density; Area measurement; Detectors; Electrical resistance measurement; Noise level; Noise measurement; Radio frequency; Schottky diodes; Semiconductor device noise; Semiconductor diodes; Voltage; Millimeter wave detectors; millimeter wave imaging; semiconductor device noise; tunnel diodes;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2007.895707
Filename
4167933
Link To Document