Title :
A Low Voltage and Power
VCO Implemented With Dynamic Threshold Voltage MOSFETS
Author :
Jang, Sheng-Lyang ; Lee, Chein-Feng
Author_Institution :
Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei
fDate :
5/1/2007 12:00:00 AM
Abstract :
A 1.1-GHz voltage control oscillator (VCO) using a standard 0.18-mum CMOS 1P6M process is fabricated. The VCO was designed with dynamic threshold voltage metal-oxide-semiconductor field-effect transistors and extremely-low-voltage and low power operation is achieved using on-chip transformers in positive feedback loops to swing the output signals above the supply and below the ground potential. This dual-swing capability maximizes the carrier power and achieves low-voltage performance. This VCO prototype is designed for a 0.34-V supply voltage while the output phase noise is -121.2dBc/Hz at 1-MHz offset frequency at the carrier frequency of 1.14GHz, the figure of merit is -192.0dB. The total power consumption is 103.7muW with the 0.34-V supply voltage. Tuning range is from 1.06 to 1.14GHz about 80MHz while the control voltage was tuned from 0 to 1.8V. The die area is 0.625times0.79mm2
Keywords :
CMOS integrated circuits; low-power electronics; voltage-controlled oscillators; 0.18 micron; 0.34 V; 0.35 V; 1.1 GHz; 1.14 GHz; 103.7 muW; DTMOS; VCO; dynamic threshold voltage MOSFET; low power; low voltage; transformer; voltage controlled oscillators; CMOS process; FETs; Feedback loop; Frequency; Low voltage; Signal design; Threshold voltage; Transformers; Voltage control; Voltage-controlled oscillators; Dynamic threshold voltage metal-oxide-semiconductor field-effect transistors (DTMOS); low power; low-voltage; transformer; voltage controlled oscillators (VCOs);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2007.895720