Title :
A Novel SiGe PIN Diode SPST Switch for Broadband T/R Module
Author :
Sun, Pinping ; Upadhyaya, Parag ; Jeong, Dong-Ho ; Heo, Deukhyoun ; La Rue, George S.
Author_Institution :
Sch. of Electr. Eng., Washington State Univ., Pullman, WA
fDate :
5/1/2007 12:00:00 AM
Abstract :
A novel octagonal SiGe p-type intrinsic n-type (PIN) diode single pole single throw (SPST) switch is first implemented in a standard 0.18-mum SiGe BiCMOS technology. Distinctive radio frequency performance of monolithic silicon PIN diode switch is achieved for broadband applications with improvement of its geometry. Over the 2-16GHz frequency band, the PIN diode SPST switch exhibits an insertion loss of less than 1dB and isolation between 42dB to 19dB. An accurate small signal model of series PIN diode is also presented
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; UHF diodes; UHF integrated circuits; elemental semiconductors; microwave diodes; microwave integrated circuits; p-i-n diodes; semiconductor switches; transceivers; 0.18 micron; 2 to 16 GHz; BiCMOS technology; PIN diode; SOC; SPST switch; SiGe; broadband T/R module; monolithic silicon diode switch; p-type intrinsic n-type diode; phased array communication systems; single pole single throw switch; small signal model; system-on-chip; transmit/receive module; Anodes; BiCMOS integrated circuits; CMOS technology; Cathodes; Costs; Germanium silicon alloys; Parasitic capacitance; Phased arrays; Silicon germanium; Switches; Diode; PIN diode; SiGe BiCMOS system-on-chip (SOC); phased array communication systems; transmit/receive (T/R) module;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2007.895706
