DocumentCode :
819886
Title :
Analytical Modeling of Speed Response of Heterojunction Bipolar Phototransistors
Author :
Helme, John P. ; Houston, Peter A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield
Volume :
25
Issue :
5
fYear :
2007
fDate :
5/1/2007 12:00:00 AM
Firstpage :
1247
Lastpage :
1255
Abstract :
This paper describes a new comprehensive analytical charge-control model, which includes all the significant delays associated with heterojunction bipolar phototransistors (HPTs). A minimum number of approximations and assumptions have been made throughout its development. The model is accurate and predictive and provides an excellent insight into the operation of the HPT since the equations developed are based on fundamental charge control of the device operation. Realistic switching results up to 40 Gb/s, which are applicable to optical fiber communications systems, have been obtained, which emphasize the value of the model in the device optimization process
Keywords :
heterojunction bipolar transistors; semiconductor device models; HPT; charge-control model; heterojunction bipolar phototransistors; Analytical models; Capacitance; Delay; Equations; Equivalent circuits; Heterojunction bipolar transistors; Optical fiber communication; Phototransistors; Predictive models; Voltage; Heterojunction bipolar transistors (HBTs); photodetectors; semiconductor device modeling; sensitivity; time-domain analysis;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.2007.893891
Filename :
4167957
Link To Document :
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