DocumentCode
819951
Title
Dynamics of magnetic domain walls with loosely spaced vertical Bloch lines
Author
Bagnérés, A. ; Humphrey, F.B.
Author_Institution
Coll. of Eng., Boston Univ., MA, USA
Volume
28
Issue
5
fYear
1992
fDate
9/1/1992 12:00:00 AM
Firstpage
2344
Lastpage
2346
Abstract
The dynamics of a magnetic domain wall containing vertical Bloch lines (VBLs) has been investigated using numerical methods. The wall is of the kind found in thin-film materials with a large anisotropy perpendicular to the plane of the film. The VBLs are all of the same chirality and are periodically repeated along the wall at equal spacing. The wall is driven by an applied field perpendicular to the film plane and the VBLs move gyrotropically. Both the wall and VBLs, starting from an equilibrium shape, soon attain a constant velocity. Distortion of the wall and structure from the equilibrium shape is evident and increases with field. The wall and VBL velocity both increase with field but neither are linear so that the ratio of VBL velocity to wall velocity decreases with applied field. For an applied field extrapolated to zero, the wall velocity agrees with the value predicted by the analytical rigid wall model and the ratio decreases by 50% for higher fields because of the distortion
Keywords
Bloch line memories; garnets; magnetic domain walls; magnetic thin films; VBL memory; constant velocity; domain wall dynamics; garnet films; large anisotropy; loosely spaced vertical Bloch lines; magnetic domain walls; numerical methods; perpendicular anisotropy; rigid wall model; thin-film; wall velocity; Anisotropic magnetoresistance; Dynamic equilibrium; Educational institutions; Equations; Gyrotropism; Magnetic domain walls; Magnetic films; Magnetic materials; Shape; Transistors;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.179486
Filename
179486
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