• DocumentCode
    819960
  • Title

    Intersublevel electroluminescence from In0.4Ga0.6As/GaAs quantum dots in quantum cascade heterostructure with GaAsN/GaAs superlattice

  • Author

    Fischer, C.H. ; Bhattacharya, P. ; Yu, P.-C.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
  • Volume
    39
  • Issue
    21
  • fYear
    2003
  • Firstpage
    1537
  • Lastpage
    1538
  • Abstract
    Infrared light emission is demonstrated from In0.4Ga0.6As self-organised quantum dots in a quantum cascade structure incorporating a GaAs/GaAsN chirped superlattice. A TE polarised emission peak is observed at 22 μm, corresponding to the calculated first-excited to ground-state transition. Other emission peaks also correspond to predicted values.
  • Keywords
    III-V semiconductors; electroluminescence; excited states; gallium arsenide; ground states; indium compounds; light polarisation; quantum cascade lasers; quantum dot lasers; semiconductor quantum dots; semiconductor superlattices; 22 micron; GaAsN-GaAs; GaAsN/GaAs chirped superlattice; In0.4Ga0.6As-GaAs; In0.4Ga0.6As/GaAs self-organised quantum dots; TE polarised emission peak; first-excited to ground-state transition; infrared light emission; intersublevel electroluminescence; quantum cascade heterostructure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030970
  • Filename
    1242817
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=819960