Title :
High speed (10-20 ns) non-volatile MRAM with folded storage elements
Author :
Ranmuthu, K.T.M. ; Ranmuthu, I.W. ; Pohm, A.V. ; Comstock, C.S. ; Hassoun, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Iowa State Univ., Ames, IA, USA
fDate :
9/1/1992 12:00:00 AM
Abstract :
In magnetoresistive random access memories (MRAMs), the read access time is a function of cell size (aspect ratio). Thus it is possible to design MRAMs for a wide range of access times. A prototype MRAM chip has been designed using 250 Ω folded memory cells, two-turn word lines, and a high-speed differential sensing scheme. Simulation results indicate the total delay through the analog circuitry to be limited to 9.8 ns, thus demonstrating the MRAM access time to be within the range 10-20 ns. Even though the power consumption of the drive circuitry tends to be high when active, the nonvolatile nature of MRAMs makes them ideal for low-power applications
Keywords :
magnetic film stores; magnetoresistive devices; random-access storage; 10 to 20 ns; access time; folded storage elements; high-speed differential sensing scheme; high-speed nonvolatile; low-power applications; magnetoresistive random access memories; prototype MRAM chip; two-turn word lines; Circuits; Computer industry; Design engineering; Electronics industry; Fabrication; Industrial electronics; Magnetic separation; Nonvolatile memory; Prototypes; Voltage;
Journal_Title :
Magnetics, IEEE Transactions on
