DocumentCode
820052
Title
CMOS Image Sensors With Self-Powered Generation Capability
Author
Fish, Alexander ; Hamami, Shy ; Yadid-Pecht, Orly
Author_Institution
VLSI Syst. Center, Beer-Sheva
Volume
53
Issue
11
fYear
2006
Firstpage
1210
Lastpage
1214
Abstract
Considerations for CMOS image sensors with self-power generation capability design are presented. Design of CMOS imagers, utilizing self-powered sensors (SPS) is a new approach for ultra low-power CMOS active pixel sensors (APS) implementations. The SPS architecture allows generation of electric power by employing a light sensitive device, located on the same silicon die with an APS and thus reduces power dissipation from the conventional power supply. A detailed analysis of the SPS structure is carried out, with respect to power dissipation requirements, sensor area and power generation efficiency, showing advantages and drawbacks of the proposed concept. An illustrative example of CMOS imager with self-power generation capability in 0.18-mum standard CMOS technology is discussed. Measurements from a test chip, implemented in 0.18-mum CMOS process, are presented
Keywords
CMOS image sensors; low-power electronics; optical sensors; 0.18 micron; CMOS active pixel sensors; CMOS image sensors; CMOS imagers; electric power generation; light sensitive device; power generated photodiode; self-powered generation capability; self-powered sensors; CMOS image sensors; CMOS technology; Image generation; Pixel; Power dissipation; Power generation; Power supplies; Semiconductor device measurement; Silicon; Testing; Active pixel sensor (APS); low-power sensor; power generated photo diode (PGPd); self-powered sensor (SPS);
fLanguage
English
Journal_Title
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher
ieee
ISSN
1549-7747
Type
jour
DOI
10.1109/TCSII.2006.882858
Filename
4012378
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