DocumentCode
820156
Title
Material Considerations for Avalanche Photodiodes
Author
David, J.P.R. ; Tan, C.H.
Author_Institution
Dept. of Electron. & Electr. Eng., Sheffield Univ., Sheffield
Volume
14
Issue
4
fYear
2008
Firstpage
998
Lastpage
1009
Abstract
Avalanche photodiodes (APDs) are widely used to detect and amplify weak optical signals by utilizing the impact ionization process. The choice of material is critical for the detection of a particular wavelength, and it is often expedient to use a combination of different materials to optimize the overall device performance. The APDs are now capable of covering a wide spectrum from the infrared down to the ultraviolet wavelengths. This paper will review the material requirements to achieve high gain with low excess noise at the different wavelength regions.
Keywords
avalanche photodiodes; impact ionisation; optical materials; semiconductor device noise; APD; avalanche photodiodes; excess noise; impact ionization process; weak optical signals; Avalanche photodiodes; Charge carrier processes; Impact ionization; Optical materials; Optical noise; Optical receivers; Optical sensors; Semiconductor device noise; Semiconductor materials; Stimulated emission; Avalanche multiplication; avalanche photodiodes (APDs); excess noise; impact ionization; tunneling;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/JSTQE.2008.918313
Filename
4582365
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