• DocumentCode
    820156
  • Title

    Material Considerations for Avalanche Photodiodes

  • Author

    David, J.P.R. ; Tan, C.H.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Sheffield Univ., Sheffield
  • Volume
    14
  • Issue
    4
  • fYear
    2008
  • Firstpage
    998
  • Lastpage
    1009
  • Abstract
    Avalanche photodiodes (APDs) are widely used to detect and amplify weak optical signals by utilizing the impact ionization process. The choice of material is critical for the detection of a particular wavelength, and it is often expedient to use a combination of different materials to optimize the overall device performance. The APDs are now capable of covering a wide spectrum from the infrared down to the ultraviolet wavelengths. This paper will review the material requirements to achieve high gain with low excess noise at the different wavelength regions.
  • Keywords
    avalanche photodiodes; impact ionisation; optical materials; semiconductor device noise; APD; avalanche photodiodes; excess noise; impact ionization process; weak optical signals; Avalanche photodiodes; Charge carrier processes; Impact ionization; Optical materials; Optical noise; Optical receivers; Optical sensors; Semiconductor device noise; Semiconductor materials; Stimulated emission; Avalanche multiplication; avalanche photodiodes (APDs); excess noise; impact ionization; tunneling;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/JSTQE.2008.918313
  • Filename
    4582365