DocumentCode :
820156
Title :
Material Considerations for Avalanche Photodiodes
Author :
David, J.P.R. ; Tan, C.H.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., Sheffield
Volume :
14
Issue :
4
fYear :
2008
Firstpage :
998
Lastpage :
1009
Abstract :
Avalanche photodiodes (APDs) are widely used to detect and amplify weak optical signals by utilizing the impact ionization process. The choice of material is critical for the detection of a particular wavelength, and it is often expedient to use a combination of different materials to optimize the overall device performance. The APDs are now capable of covering a wide spectrum from the infrared down to the ultraviolet wavelengths. This paper will review the material requirements to achieve high gain with low excess noise at the different wavelength regions.
Keywords :
avalanche photodiodes; impact ionisation; optical materials; semiconductor device noise; APD; avalanche photodiodes; excess noise; impact ionization process; weak optical signals; Avalanche photodiodes; Charge carrier processes; Impact ionization; Optical materials; Optical noise; Optical receivers; Optical sensors; Semiconductor device noise; Semiconductor materials; Stimulated emission; Avalanche multiplication; avalanche photodiodes (APDs); excess noise; impact ionization; tunneling;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2008.918313
Filename :
4582365
Link To Document :
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