Title :
Modification of Early Effect for 28-nm nMOSFETs Deposited With HfZrOx Dielectric After DPN Process Accompanying Nitrogen Concentrations
Author :
Win-Der Lee ; Mu-Chun Wang ; Shea-Jue Wang ; Wen-How Lan ; Chao-Wang Li ; Bor-Wen Yang
Author_Institution :
Dept. of Electr. Eng., Lee-Ming Inst. of Technol., Taipei, Taiwan
Abstract :
The model of the Early effect at nanonode devices should be modified owing to the unignored contribution of vertical gate field. This effect is more obvious when the channel length is decreased more. Using higher decoupled plasma nitridation nitrogen treatment after high-k dielectric deposition, besides enhancing the drive current due to promoting the microscopic homogeneity of the Hf-based film, seems also to little suppress the Early effect. This phenomenon at L = 0.03 μm device is proved and due to the lower β-slope of influencing the high-vertical field.
Keywords :
MOSFET; dielectric materials; hafnium compounds; nitridation; nitrogen; plasma applications; DPN process; HfZrOx; N; channel length; decoupled plasma nitridation nitrogen treatment; drive current; early effect; high-k dielectric deposition; microscopic homogeneity; nMOSFET; nanonode devices; nitrogen concentrations; size 28 nm; vertical gate field; Annealing; Dielectrics; High K dielectric materials; Logic gates; MOSFET; Metals; Plasmas; Decoupled plasma nitridation (DPN); Early effect; MOSFET; high- $k$ (HK) dielectric; high-k (HK) dielectric; model;
Journal_Title :
Plasma Science, IEEE Transactions on
DOI :
10.1109/TPS.2014.2357024
