Title :
Dynamics of carrier heating and sweepout in waveguide saturable absorbers
Author :
Uskov, Alexander V. ; Karin, J.R. ; Nagarajan, Radhakrishnan ; Bowers, J.E.
Author_Institution :
Lebedev (P.N.) Phys. Inst., Moscow, Russia
fDate :
6/1/1995 12:00:00 AM
Abstract :
Pump-probe measurements in reverse-biased GaAs-GaAlAs waveguide saturable absorbers used in mode-locked diode lasers reveal an ultrafast transient in the absorption recovery dynamics, and a second slower signal before the final recovery. In this paper, we present a numerical model of the absorption and carrier dynamics in these saturable absorbers. The model includes high-field and space-charge effects, in addition to the spectral hole burning and carrier heating typically considered in semiconductor laser amplifiers. The results of the model indicate that field-induced carrier heating strongly influences the absorption dynamics in saturable absorbers. Screening of the electric field by drifting photogenerated charges affects the sweepout of carriers from the absorbing region, and thus, influences the absorption dynamics as well
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high field effects; hot carriers; laser accessories; laser mode locking; optical hole burning; optical saturable absorption; optical waveguides; p-n heterojunctions; space charge; GaAs-GaAlAs; absorption dynamics; absorption recovery dynamics; carrier dynamics; carrier heating; drifting photogenerated charges; electric field screening; field-induced carrier heating; high-field effects; mode-locked diode lasers; numerical model; pump-probe measurements; reverse-biased GaAs-GaAlAs waveguide saturable absorbers; second slower signal; space-charge effects; spectral hole burning; sweepout; ultrafast transient; waveguide saturable absorbers; Absorption; Diode lasers; Heating; Laser mode locking; Optical waveguides; Semiconductor lasers; Semiconductor optical amplifiers; Semiconductor waveguides; Solid lasers; Waveguide lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.401241