Title :
Potential of InGaAs/GaAs Quantum Dots for Applications in Vertical Cavity Semiconductor Optical Amplifiers
Author :
Vasileiadis, Miltiadis ; Alexandropoulos, Dimitris ; Adams, Michael J. ; Simos, Hercules ; Syvrid, Dimitris
Author_Institution :
Dept. of Mater. Sci., Patras Univ., Patras
Abstract :
The use of InGaAs/GaAs quantum dots (QDs) in vertical cavity semiconductor optical amplifiers (VCSOAs) is proposed and analyzed. The results underline the distinctive differences between practical designs for QD vertical cavity semiconductor lasers and QD-VCSOAs. By means of a QD rate-equation scheme that accounts for both homogeneous and inhomogeneous broadening and the VCSOA cavity characteristics, the effects of material properties are identified. The design routes outlined here ensure the suitability of QD-VCSOAs for high-speed applications (>100 Gb/s) that rely on the fast carrier dynamics.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; semiconductor optical amplifiers; surface emitting lasers; InGaAs-GaAs; VCSEL; VCSOA; quantum dots; vertical cavity semiconductor lasers; vertical cavity semiconductor optical amplifiers; Gallium arsenide; Indium gallium arsenide; Optical design; Optical fiber networks; Optical filters; Optical interconnections; Optical signal processing; Quantum dots; Semiconductor lasers; Semiconductor optical amplifiers; Quantum dots (QDs); vertical cavity semiconductor laser (VCSEL); vertical cavity semiconductor optical amplifier (VCSOA);
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2007.915517
