• DocumentCode
    820537
  • Title

    Performance prediction and function recovery of CMOS circuits damaged by Co-60 irradiation

  • Author

    Chang-Liao, K.-S. ; Hwu, J.-G.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    139
  • Issue
    3
  • fYear
    1992
  • fDate
    6/1/1992 12:00:00 AM
  • Firstpage
    319
  • Lastpage
    324
  • Abstract
    A performance prediction of total-dose radiation effects on CMOS ICs is described. A good agreement between the simulated and the experimental results is obtained. The function recovery of the postirradiation CMOS ICs can be achieved by increasing the power supply voltage and input signal amplitude, or by an annealing treatment at 350°C in Ar ambient for ten minutes
  • Keywords
    CMOS integrated circuits; circuit reliability; failure analysis; radiation effects; 350 degC; 60Co irradiation; Ar ambient; CMOS circuits; annealing treatment; failure level; function recovery; input signal amplitude; performance prediction; power supply voltage; total-dose radiation effects;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices and Systems, IEE Proceedings G
  • Publisher
    iet
  • ISSN
    0956-3768
  • Type

    jour

  • Filename
    143328
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=820537