Title :
Performance prediction and function recovery of CMOS circuits damaged by Co-60 irradiation
Author :
Chang-Liao, K.-S. ; Hwu, J.-G.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
6/1/1992 12:00:00 AM
Abstract :
A performance prediction of total-dose radiation effects on CMOS ICs is described. A good agreement between the simulated and the experimental results is obtained. The function recovery of the postirradiation CMOS ICs can be achieved by increasing the power supply voltage and input signal amplitude, or by an annealing treatment at 350°C in Ar ambient for ten minutes
Keywords :
CMOS integrated circuits; circuit reliability; failure analysis; radiation effects; 350 degC; 60Co irradiation; Ar ambient; CMOS circuits; annealing treatment; failure level; function recovery; input signal amplitude; performance prediction; power supply voltage; total-dose radiation effects;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
