Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2- and 3.5-kV 4H-SiC JBS Diodes

4H-SiC Junction Barrier Schottky (JBS) diodes (1.2 and 3.5 kV) have been processed using the same technology with two different layouts. From 4 A and for the whole temperature range, the 3.5-kV diodes exhibit a bipolar conduction independent of the layout. However, the behavior of the 1.2-kV diodes depends on the design. At 500 V–300 $^{\circ}\hbox {C}$ , the leakage current is only 100 nA and 10 $\mu\hbox {A}$ for the 3.5- and 1.2-kV diodes, respectively. The switch-off performances show a reverse peak current of only 50% of the nominal current at 300 $^{\circ}\hbox {C}$ for all JBS diodes. The JBS diodes have a surge current capability of around 80 A, two times higher than the Schottky diodes. DC electrical stresses are performed during 50 h, and all the 1.2-kV diodes exhibit no bipolar degradation. Nevertheless, some slight bipolar degradation is observed in 3.5-kV JBS diodes. Electroluminescence measurements exhibit the expansion of stacking faults in 3.5-kV diodes unlike in 1.2-kV diodes.