A novel bipolar-MOSFET low-noise amplifier (BiFET LNA), circuit configuration, design methodology, and chip implementation

Author

Ma, Pingxi ; Racanelli, Marco ; Zheng, Jie ; Knight, Marion

Author_Institution

Jazz Semicond. Inc., Newport Beach, CA, USA

Volume

51

Issue

11

fYear

2003

Firstpage

2175

Lastpage

2180

Abstract

This paper proposes a new RF circuit configuration: the Bipolar cascoded with a mosFET (BiFET). Applying the BiFET for low-noise amplifiers (LNAs), we have developed a new BiFET-based design methodology. By using this methodology, a BiFET LNA has been designed based on Jazz Semiconductor Inc.´s SiGe90 BiCMOS process. The packaged chip tested on board has demonstrated a 16-dB power-gain 1.6-dB noise-figure -6.5-dBm input third intercept point while consuming only 3 mW (2.2 V × 1.4 mA) in the personal communication system (PCS) band. To our knowledge, this is the lowest current silicon-based LNA reported to date that maintains good PCS band performance.

Keywords

BIMOS integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; integrated circuit design; integrated circuit noise; semiconductor materials; 1.4 mA; 1.6 dB; 16 dB; 2.2 V; 3 mW; BiFET LNA; BiFET-based design methodology; PCS band performance; RF circuit configuration; RFIC; SiGe; SiGe90 BiCMOS process; bipolar-MOSFET LNA; chip implementation; low-noise amplifier; personal communication system band; BiCMOS integrated circuits; Design methodology; Energy consumption; Linearity; Low-noise amplifiers; MOSFET circuits; Noise figure; Radio frequency; Semiconductor device noise; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2003.818581

Filename

1242978