DocumentCode
820867
Title
Barrier-free direct-contact-via (DCV) structures for copper interconnects
Author
Li, C.Y. ; Zhang, D.H. ; Wu, Jin Jei ; Su, S.S. ; Qian, Yi ; Koh, L. ; Foo, P.D.
Author_Institution
Deep Submicron Circuit, Inst. of Microelectron., Singapore
Volume
38
Issue
18
fYear
2002
fDate
8/29/2002 12:00:00 AM
Firstpage
1026
Lastpage
1028
Abstract
New barrier-free direct-contact-via (DCV) structures applicable to 0.18 μm integrated circuits have been developed based on step coverage of the Ta barrier and time-controlled plasma etching. The via resistance in the novel DCV structures could be reduced to 29%, while the breakdown voltage in the novel DCV structures can be enhanced to 150%
Keywords
ULSI; VLSI; copper; integrated circuit interconnections; leakage currents; semiconductor device breakdown; sputter etching; tantalum; 0.18 micron; Cu; Cu interconnects; Ta; barrier-free direct contact via structures; breakdown electrical field; breakdown voltage enhancement; dual damascene structures; integrated circuits; ionised-metal plasma Ta barrier; leakage current; time-controlled plasma etching; via resistance reduction;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20020697
Filename
1033251
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