Title :
Microcavity vacuum-field configuration and the spontaneous emission power
Author :
Zhang, T. ; Wohlbier, J.G. ; Choquette, Kent D. ; Tabatabaie, N.
Author_Institution :
Wisconsin Univ., Madison, WI, USA
fDate :
6/1/1995 12:00:00 AM
Abstract :
The axial and lateral spontaneous emission intensities from vertical-cavity laser diodes have been studied both experimentally and theoretically. The measurements show that spontaneous emission from the cavity perimeter (lateral emission) is overwhelmingly larger than the same emanating along the lasing direction (axial emission). A model for lateral and axial spontaneous emission from microcavities is postulated based on one- and two-dimensional vacuum electromagnetic field confinement, respectively. A new cavity mode counting technique is developed and utilized to calculate the spontaneous emission initio. The resulting field configuration theory is in good agreement with the emission intensity measurements
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; laser modes; semiconductor lasers; spontaneous emission; surface emitting lasers; AlGaAs; axial emission; cavity mode counting technique; cavity perimeter; emission intensity measurements; field configuration theory; lasing direction; lateral emission; microcavity vacuum-field configuration; spontaneous emission power; vacuum electromagnetic field confinement; vertical-cavity laser diodes; Diode lasers; Electromagnetic fields; Electromagnetic measurements; Electromagnetic modeling; Laser modes; Laser theory; Microcavities; Semiconductor lasers; Spontaneous emission; Vertical cavity surface emitting lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.401248
