DocumentCode
821150
Title
High power Al0.3Ga0.7As/In0.2Ga 0.8As enhancement-mode PHEMT for low-voltage wireless communication systems
Author
Chen, S.H. ; Li Chang ; Chang, E.Y. ; Wu, J.W. ; Chun-Yen Chang
Author_Institution
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
38
Issue
18
fYear
2002
fDate
8/29/2002 12:00:00 AM
Firstpage
1063
Lastpage
1064
Abstract
A 20 mm-wide enhancement-mode pseudomorphic high-electron-mobility transistor (E-PHEMT) has been developed. The device has high transconductance of 490 mS/mm, and high maximum drain current of 350 mA/mm due to the use of an Al0.3Ga0.7As/In0.2 Ga0.8As-based structure for carrier confinement. At 1.9 GHz and 3.0 V, the E-PHEMT shows 34.1 dBm (128 mW/mm) output power with power-added efficiency (PAE) of 64.5%. At 2.4 V, the maximum saturated output power is 32.25 dBm and maximum PAE is 78.5%. The E-PHEMT demonstrates excellent power performance at 1.9 GHz and below 3 V
Keywords
III-V semiconductors; UHF field effect transistors; aluminium compounds; gallium arsenide; indium compounds; mobile radio; power HEMT; 1.9 GHz; 2.4 to 3 V; 20 mm; 490 mS/mm; 64.5 to 78.5 percent; Al0.3Ga0.7As-In0.2Ga0.8 As; Al0.3Ga0.7As/In0.2Ga0.8 As-based structure; LV wireless communication systems; carrier confinement; cellular handset application; enhancement-mode PHEMT; high power PHEMT; low-voltage systems; maximum drain current; pseudomorphic HEMT; pseudomorphic high electron-mobility transistor; transconductance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20020700
Filename
1033275
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