Packaging Effects on Transistor Radiation Response

A procedure is established for determining the effective device radiation dose from the equivalent silicon ionizing dose as measured by a silicon calorimeter, provided the incident spectrum and device dimensions are known. Experimental data is obtained from a silicon transistor packaged in Kovar and Kovar/ gold TO-5 cans and subjected to low-and high-energy photon radiation environments. The experimental results are compared to depth-dose profiles calculated by the SANDYL radiation transport code. The procedure correlates device photocurrent data between radiation environments with different photon energies.