Integrated antennas on Si with over 100 GHz performance, fabricated using an optimized proton implantation process

Author

Chan, K.T. ; Chin, Alvin ; Lin, Y.D. ; Chang, C.Y. ; Zhu, Caoxiang ; Li, M.F. ; Kwong, D.L. ; McAlister, S. ; Duh, D.S. ; Lin, W.J.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

13

Issue

11

fYear

2003

Firstpage

487

Lastpage

489

Abstract

We have improved the performance of integrated antennas on Si for possible application in wireless communications and wireless interconnects. For practical VLSI integration, we have reduced the antenna size and optimized the proton implantation to a low energy of /spl sim/4 MeV with a depth of /spl sim/175 μm. To avoid any possible contamination, the ion implantation is applied after device fabrication. Excellent performance such as very low RF power loss up to 50 GHz, record high 103 GHz antenna resonance, and sharp 5 GHz bandwidth have been achieved.

Keywords

antenna radiation patterns; elemental semiconductors; ion implantation; millimetre wave antennas; monopole antennas; silicon; 100 GHz performance; 103 GHz; 103 GHz antenna resonance; 175 micron; 4 MeV; 5 GHz; RF power loss; Si; VLSI integration; antenna size; implantation depth; implantation energy; integrated antennas; monopole antennas; optimized proton implantation process; polarized radiation pattern; sharp 5 GHz bandwidth; wireless communications; wireless interconnects; Bandwidth; Contamination; Fabrication; Ion implantation; Performance loss; Protons; Radio frequency; Resonance; Very large scale integration; Wireless communication;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2003.817146

Filename

1243540