• DocumentCode
    821265
  • Title

    Radiation Effects on Bipolar Integrated Injection Logic

  • Author

    Raymond, J.P. ; Wong, T.Y. ; Schuegraf, K.K.

  • Author_Institution
    Northrop Research and Technology Center Hawthorne, California 90250
  • Volume
    22
  • Issue
    6
  • fYear
    1975
  • Firstpage
    2605
  • Lastpage
    2610
  • Abstract
    Integrated Injection Logic (I2 L) is a new highdensity, low power bipolar LSI technology that offers major performance advantages over other bipolar and MOS/LSI technologies. Results are presented on the experimentally-determined radiation sus ceptibility of developmental unhardened I2L LSI logic cells in terms of neutron-induced displacement damage, ionizing - dose-induced surface effects and transient photoresponse.
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1975.4328176
  • Filename
    4328176
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=821265