DocumentCode :
821325
Title :
CMOS 2D Hall microsensor with minimal design complexity
Author :
Roumenin, Ch.S. ; Lozanova, S.V.
Author_Institution :
Inst. of Control & Syst. Res., Bulgarian Acad. of Sci., Sofia
Volume :
43
Issue :
9
fYear :
2007
Firstpage :
511
Lastpage :
513
Abstract :
A new silicon integrated 2D Hall sensor for high-accuracy magnetic-field in-plane vector measurements fabricated through a CMOS technology, has been suggested and tested. Its unique advantage is minimal design complexity: only four external connections, lack of cross-sensitivity between the channels and very high resolution. In addition, a simple, but highly effective circuitry fully compensates for the offsets and the nonlinear magnetoresistance of the two outputs
Keywords :
CMOS integrated circuits; Hall effect transducers; magnetic field measurement; magnetic sensors; magnetoresistance; microsensors; CMOS 2D Hall microsensor; high-accuracy measurements; magnetic-field in-plane vector measurements; minimal design complexity; nonlinear magnetoresistance; silicon integrated 2D Hall sensor;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20070784
Filename :
4168487
Link To Document :
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