Title :
Design of CNTFET-based reconfigurable logic gate
Author :
Liu, J. ; Connor, I.O. ; Navarro, D. ; Gaffiot, F.
Author_Institution :
Inst. des Nanotechnol. de Lyon, CNRS UMR, Ecully
Abstract :
Described is a dynamically reconfigurable 8-function logic gate with seven double-gate carbon nanotube field-effect transistors which demonstrates p-type or n-type behaviour depending on the back-gate voltage. Through simulations, the gate is shown to operate at 20 GHz and has been used to build a 1-bit pipelined full adder using physically identical reconfigurable cells
Keywords :
carbon nanotubes; field effect MMIC; logic gates; microwave field effect transistors; nanotube devices; 20 GHz; CNTFET; back gate voltage; carbon nanotube; double gate; field effect transistors; n-type behaviour; p-type behaviour; reconfigurable cells; reconfigurable logic gate;
Journal_Title :
Electronics Letters
