Title :
Fabrication and application of MOS-HBT-NDR circuit using standard SiGe process
Author :
Gan, K.J. ; Tsai, C.-S. ; Sun, W.-L.
Author_Institution :
Dept. of Electron. Eng., Kun Shan Univ., Taiwan
Abstract :
A novel negative differential resistance (NDR) circuit made of a metal-oxide-semiconductor field-effect-transistor (MOS) and a heterojunction bipolar transistor (HBT) is presented. By suitably modulating the width/length parameters of the MOS devices, the fabrication of this MOS-HBT-NDR circuit and its application to inverter design based on the standard 0.35 mum SiGe process was demonstrated
Keywords :
Ge-Si alloys; MOS integrated circuits; bipolar integrated circuits; invertors; MOS-HBT-NDR circuit; SiGe; SiGe process; fabrication; heterejunction bipolar transistor; inverter design; metal-oxide-semiconductor field-effect-transistor; negative differential resistance circuit; standard SiGe process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20070039
