• DocumentCode
    821380
  • Title

    Room-temperature InAs=AlSb quantum-cascade laser operating at 8.9 μm

  • Author

    Ohtani, K. ; Fujita, K. ; Ohno, H.

  • Author_Institution
    Lab. for Nanoelectronics & Semicond. Spintronics, Tohoku Univ., Aoba
  • Volume
    43
  • Issue
    9
  • fYear
    2007
  • Firstpage
    520
  • Lastpage
    522
  • Abstract
    A room-temperature InAs/AlSb quantum-cascade laser operating at 8.9 mum is reported. The laser structure is grown on an n-InAs (100) substrate by solid-source molecular-beam epitaxy. The active region utilises a diagonal intersubband transition in an InAs/AlSb three-quantum-well structure. Observed threshold current density in pulse mode is 2.6 kA/cm2 at 80 K and 12.0 kA/cm2 at 300 K. The maximum operation temperature is 305 K
  • Keywords
    III-V semiconductors; aluminium compounds; indium compounds; quantum cascade lasers; semiconductor epitaxial layers; wide band gap semiconductors; 300 K; 305 K; 8.9 micron; 80 K; InAs-AlSb; n-InAs (100) substrate; quantum-cascade laser; quantum-well structure; room-temperature; solid-source molecular-beam epitaxy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20070251
  • Filename
    4168493
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=821380