Magnetoresistance and galvanomagnetics in bias sputtered Co/Cu multilayers

Author

Honda, S. ; Mimura, T. ; Ohmoto, S. ; Nawate, M.

Author_Institution

Fac. of Eng., Hiroshima Univ., Japan

Volume

28

Issue

5

fYear

1992

fDate

9/1/1992 12:00:00 AM

Firstpage

2745

Lastpage

2747

Abstract

Co/Cu multilayers have been prepared on glass substrates by sputtering with negative substrate bias voltage. In zero biased films, the magnetoresistance (MR) increases monotonically with the Cu layer thickness (d_Cu) up to 40 Å, resulting from decoupling between the ferromagnetic layers. On the other hand, for -30-V biased films, three oscillation peaks with a period of about 12 Å appear in the d_Cu dependence of the MR ratio because of the RKKY-like interlayer coupling. In the oscillation peak at d_Cu=24 Å, a sharp MR change occurs at low applied magnetic field, owing to a very small coupling constant of J =0.008 erg/cm². The Hall resistivity and the planar Hall effect have been also measured

Keywords

cobalt; copper; magnetic multilayers; magnetic thin films; magnetoresistance; sputtered coatings; 0 to -30 V; 0 to 40 A; Co-Cu multilayers; Cu layer thickness; Hall resistivity; MR ratio; RKKY-like interlayer coupling; bias sputtered multilayers; decoupling between ferromagnetic layers; galvanomagnetics; glass substrates; magnetoresistance; negative substrate bias voltage; oscillation peaks; planar Hall effect; small coupling constant; zero biased films; Conductivity; Hall effect; Magnetic field measurement; Magnetic films; Magnetic multilayers; Magnetoresistance; Morphology; Sputtering; Substrates; Voltage;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.179615

Filename

179615