DocumentCode :
821411
Title :
Magnetoresistance and galvanomagnetics in bias sputtered Co/Cu multilayers
Author :
Honda, S. ; Mimura, T. ; Ohmoto, S. ; Nawate, M.
Author_Institution :
Fac. of Eng., Hiroshima Univ., Japan
Volume :
28
Issue :
5
fYear :
1992
fDate :
9/1/1992 12:00:00 AM
Firstpage :
2745
Lastpage :
2747
Abstract :
Co/Cu multilayers have been prepared on glass substrates by sputtering with negative substrate bias voltage. In zero biased films, the magnetoresistance (MR) increases monotonically with the Cu layer thickness (dCu) up to 40 Å, resulting from decoupling between the ferromagnetic layers. On the other hand, for -30-V biased films, three oscillation peaks with a period of about 12 Å appear in the dCu dependence of the MR ratio because of the RKKY-like interlayer coupling. In the oscillation peak at dCu=24 Å, a sharp MR change occurs at low applied magnetic field, owing to a very small coupling constant of J =0.008 erg/cm2. The Hall resistivity and the planar Hall effect have been also measured
Keywords :
cobalt; copper; magnetic multilayers; magnetic thin films; magnetoresistance; sputtered coatings; 0 to -30 V; 0 to 40 A; Co-Cu multilayers; Cu layer thickness; Hall resistivity; MR ratio; RKKY-like interlayer coupling; bias sputtered multilayers; decoupling between ferromagnetic layers; galvanomagnetics; glass substrates; magnetoresistance; negative substrate bias voltage; oscillation peaks; planar Hall effect; small coupling constant; zero biased films; Conductivity; Hall effect; Magnetic field measurement; Magnetic films; Magnetic multilayers; Magnetoresistance; Morphology; Sputtering; Substrates; Voltage;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.179615
Filename :
179615
Link To Document :
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