DocumentCode :
821423
Title :
Magnetization and magnetoresistance of Co/Cu layered films
Author :
McGuire, T.R. ; Plaskett, T.S.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
28
Issue :
5
fYear :
1992
fDate :
9/1/1992 12:00:00 AM
Firstpage :
2748
Lastpage :
2750
Abstract :
Multilayer Co/Cu and sandwich layer Co/Cu/Co films made by magnetron sputtering using no special layering elements give the oscillatory magnetic coupling and magnetoresistance (MR) previously reported. The largest value with MR 80% is for a Co(10 Å)/Cu(10 Å) multilayer 340 Å thick. The increase of resistivity in small magnetic fields is the source of the MR. The MR is small in the sandwich layer films until Cu thicknesses above 23 Å where values of MR are 11% and the magnetic hysteresis loops show structure. The MR is isotropic within ±1% except for demagnetization. The authors prefer a model where the interface disorder is responsible for the large change in resistivity by restricting the conduction electron mean free path
Keywords :
cobalt; copper; magnetic multilayers; magnetic thin films; magnetoresistance; sputtered coatings; 10 to 340 A; Co-Cu multilayers; interface disorder; magnetoresistance; magnetron sputtering; model; oscillatory magnetic coupling; sandwich layer; Conductivity; Couplings; Demagnetization; Magnetic fields; Magnetic films; Magnetic hysteresis; Magnetic multilayers; Magnetization; Magnetoresistance; Sputtering;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.179616
Filename :
179616
Link To Document :
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