DocumentCode
821426
Title
The Effect of Radiation Damage on the Noise Performance of Fet´s
Author
Chiwaki, M. ; Tomimasu, T.
Author_Institution
Electrotechnical Laboratory Tanashi, Tokyo, Japan
Volume
22
Issue
6
fYear
1975
Firstpage
2696
Lastpage
2702
Abstract
The gate noise from radiation induced defects in MOSFET´s and JFET´s has been studied for 24.8 MeV electron irradiations up to about 1 x 1016 e/cm2. The flicker noise increase induced in JFET´s has been interpreted as due to the defect generation and recombination centers induced by radiation damage within the depletion layer. Finally, it is shown that the noise performance of JFET´s is well applicable for high-intensity and high-level radiation detection.
Keywords
1f noise; Electrons; FETs; Laboratories; Noise measurement; Radiation detectors; Semiconductor device noise; Temperature; Transconductance; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1975.4328192
Filename
4328192
Link To Document