DocumentCode
821448
Title
Coercivity mechanism and microstructure of (Co/Pt) multilayers
Author
Suzuki, Takao ; Notarys, Harris ; Dobbertin, Darrell C. ; Lin, Chien-Jung ; Weller, Dieter ; Miller, Doroles C. ; Gorman, Grace
Author_Institution
IBM Almaden Res. Center, San Jose, CA, USA
Volume
28
Issue
5
fYear
1992
fDate
9/1/1992 12:00:00 AM
Firstpage
2754
Lastpage
2759
Abstract
The coercivity mechanism of (Co/Pt) multilayers with high H c and high squareness fabricated by sputtering is mainly due to the wall pinning rather than the nucleation process. In order to estimate the size of a wall-pinning site, a study of the temperature dependence of the coercivity, perpendicular magnetic anisotropy, and saturation magnetization for multilayers fabricated under various substrate conditions has been carried out. The size r 0 of the pinning sites of about 4 Å was obtained for the multilayer film deposited onto an etched SiNx film. The size r 0 increases with less interface-sharpness, which was confirmed by X-ray low angle diffraction. This implies that the pinning site is closely related to the interfacial region. An inhomogeneity near the interface between Co and Pt is believed to play a major role as pinning for a wall motion. This result is compared to the case of Tb26(FeCo)74 films, where the size is found to be about 60 Å ~250 Å
Keywords
cobalt; coercive force; crystal microstructure; magnetic domain walls; magnetic multilayers; platinum; sputtered coatings; 4 A; Co-Pt multilayers; Hc; SiNx substrate; X-ray low angle diffraction; coercivity; coercivity mechanism; interfacial region; microstructure; multilayer film; perpendicular magnetic anisotropy; pinning site size; saturation magnetization; squareness; substrate conditions; temperature dependence; wall pinning; Coercive force; Magnetic films; Magnetic multilayers; Microstructure; Nonhomogeneous media; Perpendicular magnetic anisotropy; Saturation magnetization; Sputtering; Substrates; Temperature dependence;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.179618
Filename
179618
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