• DocumentCode
    821510
  • Title

    180nm metal gate, high-k dielectric, implant-free III--V MOSFETs with transconductance of over 425 μS/μm

  • Author

    Hill, R.J.W. ; Moran, D.A.J. ; Li, X. ; Zhou, H. ; Macintyre, D. ; Thoms, S. ; Droopad, R. ; Passlack, M. ; Thayne, I.G.

  • Author_Institution
    Nanoelectronics Res. Centre, Univ. of Glasgow
  • Volume
    43
  • Issue
    9
  • fYear
    2007
  • Firstpage
    543
  • Lastpage
    545
  • Abstract
    Data is reported from 180 nm gate length GaAs n-MOSFETs with drive current (Ids,sat) of 386 μA/μm (Vg=Vd =1.5 V), extrinsic transconductance (gm) of 426 μS/μm, gate leakage ( jg,limit) of 44 nA/cm2, and on resistance (Ron) of 1640 Ω μm. The gm and Ron metrics are the best values reported to date for III-V MOSFETs, and indicate their potential for scaling to deca-nanometre dimensions
  • Keywords
    III-V semiconductors; MOSFET; gallium arsenide; high-k dielectric thin films; 180 nm; GaAs; III-V MOSFET; deca-nanometre dimensions; drive current; extrinsic transconductance; gate leakage; high-k dielectric; implant-free architecture; metal gate; n-MOSFET; on resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20070427
  • Filename
    4168507
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=821510