DocumentCode :
821672
Title :
Origin and Control of the Dominant Impurities in High-Purity Germanium
Author :
Haller, E.E. ; Hansen, W.L. ; Hubbard, G.S. ; Goulding, F.S.
Author_Institution :
Lawrence Berkeley Laboratory University of California Berkeley, California 94720
Volume :
23
Issue :
1
fYear :
1976
Firstpage :
81
Lastpage :
87
Abstract :
Techniques have been developed to consistently purify germanium to the 1010 atoms/cm3 range. The major impurities are the acceptors boron and aluminum and the donor phosphorous. Formation of nonsegregating compounds of boron and aluminum make these elements difficult to remove by conventional zone refining whereas phosphorous and all other electrically-active impurities segregate normally and are therefore removed in the zone refining process. The only significant impurity introduced in our Czochralski crystal puller is phosphorous whose source has been traced to the quartz crucible. To reliably reduce impurity concentrations to acceptable levels it has been necessary to develop techniques for determining the types and concentrations of impurities in both the final single crystals and in the polycrystalline zone-refined ingots and to relate these results to the use of various boat and crucible materials. Photothermal Ionization Spectroscopy and electrical measurements have been used to identify and measure the impurities.
Keywords :
Aluminum; Boats; Boron; Crystalline materials; Crystals; Electric variables measurement; Germanium; Impurities; Ionization; Materials reliability;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1976.4328219
Filename :
4328219
Link To Document :
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