Title :
A Comprehensive Model for Predicting Semiconductor Detector Performance
Author :
Swierkowski, S.P.
Author_Institution :
Lawrence Livermore Laboratory, University of California Livermore, California 94550
Abstract :
A Monte-Carlo computational model has been developed to simulate the photon and electron spectral response in semiconductor detectors. Source photons from 10 eV to 1 GeV are three-dimensionally absorbed in detectors of almost arbitrary shape. One-dimensional charge collection in an arbitrary electric field profile includes trapping and electronics system effects. HgI2, CdTe, and Ge spectra, as well as full energy peak and absorption efficiency calculations, are made into the MeV range.
Keywords :
Absorption; Computational modeling; Detectors; Electrons; Energy resolution; Geometry; Optical computing; Predictive models; Semiconductor materials; Shape;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1976.4328227
