DocumentCode
821746
Title
A Comprehensive Model for Predicting Semiconductor Detector Performance
Author
Swierkowski, S.P.
Author_Institution
Lawrence Livermore Laboratory, University of California Livermore, California 94550
Volume
23
Issue
1
fYear
1976
Firstpage
131
Lastpage
137
Abstract
A Monte-Carlo computational model has been developed to simulate the photon and electron spectral response in semiconductor detectors. Source photons from 10 eV to 1 GeV are three-dimensionally absorbed in detectors of almost arbitrary shape. One-dimensional charge collection in an arbitrary electric field profile includes trapping and electronics system effects. HgI2, CdTe, and Ge spectra, as well as full energy peak and absorption efficiency calculations, are made into the MeV range.
Keywords
Absorption; Computational modeling; Detectors; Electrons; Energy resolution; Geometry; Optical computing; Predictive models; Semiconductor materials; Shape;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1976.4328227
Filename
4328227
Link To Document