• DocumentCode
    821762
  • Title

    A Thin All Epitaxial Silicon Detector with Internal Amplification

  • Author

    Gruhn, C.R.

  • Author_Institution
    CERN, Geneva, Switzerland
  • Volume
    23
  • Issue
    1
  • fYear
    1976
  • Firstpage
    145
  • Lastpage
    152
  • Abstract
    An all epitaxial silicon avalanche diode (ESAD) having a total thickness of 36 ¿ (4 × 10-4 radiation lengths) has been fabricated. The design lends itself to the fabrication of thin detectors having an enhanced sensitivity to minimum ionizing particles. The uniformity of gain, signal to noise, and resolution of the detectors are studied. The response of the detector to minimum ionizing particles is measured.
  • Keywords
    Argon; Detectors; Epitaxial layers; Etching; Fabrication; Geometry; Impurities; Laboratories; Signal design; Silicon;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1976.4328229
  • Filename
    4328229
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=821762