Title :
Temperature characteristics of a vertical-cavity surface-emitting laser with a broad-gain bandwidth
Author :
Kajita, Mikihiro ; Kawakami, Takeshi ; Nido, Masaaki ; Kimura, Akitaka ; Yoshikawa, Takashi ; Kurihara, Kaori ; Sugimoto, Yoshimasa ; Kasahara, Kenichi
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
fDate :
6/1/1995 12:00:00 AM
Abstract :
Temperature-insensitive characteristics are of great importance in implementing the actual applications of vertical-cavity surface-emitting lasers (VCSEL´s) because of the temperature change in the surroundings. To extend the operational temperature range of such lasers, we fabricated a VCSEL with a broad gain bandwidth. The active layers in VCSEL´s consist of multiple quantum wells (MQW´s) with different bandgap energies. From the change in the threshold current, with temperature as a parameter, we found that the operational temperature range of a VCSEL with a broad gain bandwidth is more than 20°C wider than that of conventional VCSEL´s, whose active layers consist of a single type of MQW. We demonstrate that the extended-gain bandwidth gives better temperature characteristics. In addition, we simulated the structure of the active layers, and the optimized structure resulted in a 1-mW light output power at less than 5 mA in a single transverse mode oscillation from 20-70°C
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser beams; laser cavity resonators; quantum well lasers; surface emitting lasers; 1 mW; 20 to 70 C; 5 mA; InGaAs; active layers; bandgap energies; broad-gain bandwidth; light output power; multiple quantum wells; operational temperature range; optimized structure; single transverse mode oscillation; temperature change; temperature characteristics; threshold current; vertical-cavity surface-emitting laser; Bandwidth; Laser transitions; Photonic band gap; Power generation; Quantum well devices; Quantum well lasers; Surface emitting lasers; Temperature distribution; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.401254